npn silicon planar medium power high gain transistor issue 2 ? july 1995 features * 10a peak pulse current * excellent h fe characteristics up to10a (pulsed) * extremely low saturation voltage e.g. 7mv typ. *i c cont 3.5a applications * power mosfet gate driver in conjunction with complementary ztx718 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v peak pulse current i cm 10 a continuous collector current i c 3.5 a base current i b 500 ma practical power dissipation* p totp 1.5 w power dissipation p tot 1w operating and storage temperature range t j :t stg -55 to +200 c * device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX618 ZTX618 c b e e-line to92 compatible d=1(d.c.) d=0.2 d=0.1 d=0.05 d=0.5 single pulse d=t1 tp t1 tp transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 derating curve t -temperature ( c) m ax p ow er dissi p at i on - (w a t t s) -40 0.50 0.25 1.0 0.75 04080 120 200 160 ambi e nt t em per a t ur e thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 r th(j-amb)1 r th(j-amb)2 ? 175 116 c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.
0.2 0 0.3 0 0.1 0.4 0.2 0.3 -55c 100c 25c i c /i b =50 i c /i b =10 i c /i b =50 i c /i b =100 25c 25c 100c -55c 25c 100c -55c i c /i b =50 v ce =2v 25c 100c -55c v ce =2v 1.0 0.8 0.4 0.6 0.2 0 1.2 1 10 0.01 0.1 100v 10v 1v 0.1v 0 0.2 450 225 0.4 0.1 1ma 100ma 10ma 1a 10a 10a 1a 100ma 10ma 1ma 10a 1a 10ma 100ma 1ma 1ma 100ma 10ma 1a 10a 1ma 100ma 10ma 1a 10a 0.4 0.8 0.6 0 1.0 100 m s 10ms 1s dc 100ms 1ms i c -collector current i c -collector current i c -collector current i c -collector current i c -collector current h fe v i c v be(sat) v ic v be(on) v i c v ce(sat) v i c v ce(sat) v i c v ce - collector voltage safe operating area single pulse test tamb=25c typical characteristics electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 20 100 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 20 27 v i c =10ma* emitter-base breakdown voltage v (br)ebo 58.3 v i e =100 m a collector cut-off current i cbo 100 na v cb =16v emitter cut-off current i ebo 100 na v eb =4v collector emitter cut-off current i ces 100 na v ces =16v collector-emitter saturation voltage v ce(sat) 7 80 210 15 150 255 mv mv mv i c =0.1a, i b =10ma* i c =1a, i b =10ma* i c =3.5a, i b =50ma* base-emitter saturation voltage v be(sat) 0.93 1.05 v i c =3.5a, i b =50ma* base-emitter turn-on voltage v be(on) 0.86 1.0 v i c =3.5a, v ce =2v* static forward current transfer ratio h fe 200 300 170 40 400 450 300 85 i c =10ma, v ce =2v* i c =200ma, v ce =2v* i c =3a, v ce =2v* i c =10a, v ce =2v* transition frequency f t 100 140 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 23 30 pf v cb =10v, f=1mhz turn-on time t (on) 170 ns v cc =10v, i c =1a i b1 =-i b2 =10ma turn-off time t (off) 400 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX618 ZTX618
0.2 0 0.3 0 0.1 0.4 0.2 0.3 -55c 100c 25c i c /i b =50 i c /i b =10 i c /i b =50 i c /i b =100 25c 25c 100c -55c 25c 100c -55c i c /i b =50 v ce =2v 25c 100c -55c v ce =2v 1.0 0.8 0.4 0.6 0.2 0 1.2 1 10 0.01 0.1 100v 10v 1v 0.1v 0 0.2 450 225 0.4 0.1 1ma 100ma 10ma 1a 10a 10a 1a 100ma 10ma 1ma 10a 1a 10ma 100ma 1ma 1ma 100ma 10ma 1a 10a 1ma 100ma 10ma 1a 10a 0.4 0.8 0.6 0 1.0 100 m s 10ms 1s dc 100ms 1ms i c -collector current i c -collector current i c -collector current i c -collector current i c -collector current h fe v i c v be(sat) v ic v be(on) v i c v ce(sat) v i c v ce(sat) v i c v ce - collector voltage safe operating area single pulse test tamb=25c typical characteristics electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 20 100 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 20 27 v i c =10ma* emitter-base breakdown voltage v (br)ebo 58.3 v i e =100 m a collector cut-off current i cbo 100 na v cb =16v emitter cut-off current i ebo 100 na v eb =4v collector emitter cut-off current i ces 100 na v ces =16v collector-emitter saturation voltage v ce(sat) 7 80 210 15 150 255 mv mv mv i c =0.1a, i b =10ma* i c =1a, i b =10ma* i c =3.5a, i b =50ma* base-emitter saturation voltage v be(sat) 0.93 1.05 v i c =3.5a, i b =50ma* base-emitter turn-on voltage v be(on) 0.86 1.0 v i c =3.5a, v ce =2v* static forward current transfer ratio h fe 200 300 170 40 400 450 300 85 i c =10ma, v ce =2v* i c =200ma, v ce =2v* i c =3a, v ce =2v* i c =10a, v ce =2v* transition frequency f t 100 140 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 23 30 pf v cb =10v, f=1mhz turn-on time t (on) 170 ns v cc =10v, i c =1a i b1 =-i b2 =10ma turn-off time t (off) 400 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX618 ZTX618
npn silicon planar medium power high gain transistor issue 2 ? july 1995 features * 10a peak pulse current * excellent h fe characteristics up to10a (pulsed) * extremely low saturation voltage e.g. 7mv typ. *i c cont 3.5a applications * power mosfet gate driver in conjunction with complementary ztx718 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v peak pulse current i cm 10 a continuous collector current i c 3.5 a base current i b 500 ma practical power dissipation* p totp 1.5 w power dissipation p tot 1w operating and storage temperature range t j :t stg -55 to +200 c * device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX618 ZTX618 c b e e-line to92 compatible d=1(d.c.) d=0.2 d=0.1 d=0.05 d=0.5 single pulse d=t1 tp t1 tp transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 derating curve t -temperature ( c) m ax p ow er dissi p at i on - (w a t t s) -40 0.50 0.25 1.0 0.75 04080 120 200 160 ambi e nt t em per a t ur e thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 r th(j-amb)1 r th(j-amb)2 ? 175 116 c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.
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